Group III-V semiconductor materials are being considered as a Si replacementfor advanced logic devices for quite some time. Advances in III-V processingtechnologies, such as interface and surface passivation, large area deepsubmicron lithography with high-aspect ratio etching primarily driven by theMOSFET development can also be used for other applications. In this paper wewill focus on photodetectors with the drift field parallel to the surface. Wecompare the proposed concept to the state-of-the-art Si-based technology anddiscuss requirements which need to be satisfied for such detectors to be usedin a single photon counting mode in blue and ultraviolet spectral region withabout 10 ps photon timing resolution essential for numerous applicationsranging from high-energy physics to medical imaging.
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